新势力光电(www.NewOpto.com)专业供应尾纤半导体激光器,尾纤激光器,单纵模激光器,单频激光器,Cobolt激光器.垂询:.
| UV/blue sensitive photodiodes | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | 5V | 410nm 5V 50Ω |
| mm | mm2 | nA | ns | ||
| PS1-2 | TO52 | 1.0x1.0 | 1 | 0.01 | 50 |
| PS1-2 | LCC6.1 | 1.0x1.0 | 1 | 0.01 | 50 |
| PC5-2 | TO5 | Ø 2.52 | 5 | 0.3 | 150 |
| PS7-2 | TO5 | 2.66x2.66 | 7 | 0.4 | 200 |
| PC10-2 | TO5 | Ø 3.57 | 10 | 1 | 300 |
| PS13-2 | TO5 | 3.5x3.5 | 13 | 1 | 300 |
| PS33-2 | TO8 | 5.7x5.7 | 33 | 2 | 600 |
| PC50-2 | BNC | Ø 7.98 | 50 | 5 | 1000 |
| PS100-2 | BNC | 10x10 | 100 | 10 | 2000 |
| PS100-2 | CERpin | 10x10 | 100 | 10 | 2000 |
| Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm | |||||
| Blue/green sensitive photodiodes | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | 5V | 410nm 5V 50Ω |
| mm | mm2 | nA | ns | ||
| PC1-6b | TO52S3 | Ø 1.13 | 1 | 0.05 | 10 |
| PC5-6b | TO5 | Ø 2.52 | 5 | 0.1 | 20 |
| PS7-6b | TO5 | 2.7x2.7 | 7 | 0.15 | 25 |
| PC10-6b | TO5 | Ø 3.57 | 10 | 0.2 | 45 |
| PS13-6b | TO5 | 3.5x3.5 | 13 | 0.25 | 50 |
| PS33-6b | TO8 | 5.7x5.7 | 33 | 0.6 | 140 |
| PS100-6b | CERpin | 10x10 | 100 | 1 | 200 |
| PS100-6b | LCC10S | 10x10 | 100 | 1 | 200 |
| Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm | |||||
| High speed photodiodes （for fast rise times at low reverse voltages） | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | 20V | 850nm 20V 50Ω |
| mm | mm2 | nA | ns | ||
| PS0.25-5 | LCC6.1 | 0.5x0.5 | 0.25 | 0.1 | 0.4 |
| PS0.25-5 | TO52S3 | 0.5x0.5 | 0.25 | 0.1 | 0.4 |
| PC0.55-5 | TO52S1 | Ø 0.84 | 0.55 | 0.2 | 1 |
| PC0.55-5 | LCC6.1 | Ø 0.84 | 0.55 | 0.2 | 1 |
| PS1-5 | LCC6.1 | 1.0x1.0 | 1 | 0.2 | 1.5 |
| PS1-5 | TO52S3 | 1.0x1.0 | 1 | 0.2 | 1.5 |
| PS7-5 | TO5 | 2.7x2.7 | 7 | 0.5 | 2 |
| PS11.9-5 | TO5 | 3.45x3.45 | 11.9 | 1 | 3 |
| PC20-5 | TO8 | Ø 5.05 | 20 | 2 | 3.5 |
| PS33-5 | TO8 | 5.7x5.7 | 33 | 2 | 3.5 |
| PS100-5 | CERpinS | 10x10 | 100 | 2 | 5 |
| PS100-5 | LCC10S | 10x10 | 100 | 2 | 5 |
| High speed photodiodes for low voltages （for low operating voltages between 3 ａnd 5 V, making them ideal for VIS ａnd NIR applications in conjunction with CMOS components） | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | 20V | 850nm 20V 50Ω |
| mm | mm2 | nA | ns | ||
| PS0.25-5t | LCC6.1 | 0.5x0.5 | 0.25 | 1 | 0.4 |
| PC0.55-5t | LCC6.1 | Ø 0.84 | 0.55 | 5 | 1 |
| PC0.55-5t | T1 3/4 | Ø 0.84 | 0.55 | 5 | 1 |
| PC0.55-5t | T1 3/4 black | Ø 0.84 | 0.55 | 5 | 1 |
| PS1-5t | LCC6.1 | 1.0x1.0 | 1 | 1 | 1 |
| IR photodiodes with min. dark current （for low-capacitance light detection as well as for α, β, ϒ ａnd X-radiation detection） | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | 10V | 850nm 10V 50Ω |
| mm | mm2 | nA | ns | ||
| PC1-6 | TO52S1 | Ø 1.13 | 1 | 0.05 | 10 |
| PC1-6 | TO52S3 | Ø 1.13 | 1 | 0.05 | 10 |
| PC5-6 | TO5 | Ø 2.52 | 5 | 0.1 | 13 |
| PS7-6 | TO5 | 2.66×2.66 | 7 | 0.1 | 15 |
| PC10-6 | TO5 | Ø 3.57 | 10 | 0.2 | 20 |
| PS13-6 | TO5 | 3.5×3.5 | 13 | 0.2 | 20 |
| PC20-6 | TO8 | Ø 5.05 | 20 | 0.3 | 25 |
| PC50-6 | TO8S | Ø 7.98 | 50 | 0.5 | 30 |
| PS100-6 | BNC | 10×10 | 100 | 0.8 | 50 |
| PS100-6 | CERpinS | 10×10 | 100 | 0.8 | 50 |
| PS100-6 | LCC10S | 10×10 | 100 | 0.8 | 50 |
| IR photodiodes with fully depletable （very low capacitance levels） | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | 10V | 905nm 10V 50Ω |
| mm | mm2 | nA | ns | ||
| PC5-7 | TO8i | Ø 2.52 | 5 | 0.05 | 45 |
| PC10-7 | TO8i | Ø 3.57 | 10 | 0.1 | 50 |
| PC20-7 | TO8Si | Ø 5.05 | 20 | 0.2 | 50 |
| PS100-7 | LCC10 | 10×10 | 100 | 1.5 | 50 |
| QP100-7 | LCC10 | 10×10 | 4×25 | 0.5 | 50 |
| Photodiodes for 1064nm （specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources） | |||||
| Type No. | Active area | Dark current | Rise time | ||
| Chip | Package | Size | Area | 150V | 1064nm 150V 50Ω |
| mm | mm2 | nA | ns | ||
| QP22-Q | TO8S | Ø 5.3 | 4×5.7 | 1.5 | 5 |
| QP45-Q | TO8S | 6.7×6.7 | 4×10.96 | 3 | 5 |
| QP154-Q | TO1032i | Ø 14.0 | 4×38.5 | 10 | 6 |
| PIN Series | Optimized for | Special features | Application |
| Series-2 | 200-500 nm | UV / Blue enhanced | Analytical instruments, readout for scintillators |
| Series-6b | 400-650 nm | Blue / Green enhanced | Photometric illuminometer |
| Series-5b | 360-550 nm | High-speed Epitaxy, blue / green enhanced | Optical fiber communication, high speed photometry |
| Series-5t | 400-850 nm | High-speed Epitaxy, low voltage （3.5V） | |
| Series-5 | 450-950 nm | High-speed Epitaxy | |
| Series-6 | 700-950 nm | General purpose, low dark current, fast response | Precision photometry, analytical instruments |
| Series-7 | 700-1100 nm | Low capacity, full depletable | High energy physics |
| Series-Q | 900-1100 nm | Enhanced NIR sensitivity, low voltage, full depletable | YAG laser detection |
| Series-i | 600-1700 nm | InGaAs photodiodes, high IR sensitivity, low dark current | Eye-sate laser detection |
| Series-X | Ionizing radiation | With or without scintillator, ultra | Medical, security, material |
高速InGaAs光电二极管 高速二极管 高速InGaAs光电二极管 InGaAs二极管
基于硅光电二极管的光电二极管探测器/光纤光谱仪/压电陶瓷/博盛
基于硅光电二极管的光电二极管探测器/滤光片/氙灯/博盛
硅光二极管 硅光电池 光电二极管：S7686
光电二极管 光电二极管
光电二极管模块 光电二极管模块
基于硅光电二极管的光电二极管探测器/博盛量子
液氮制冷HgCdTe探测器/光电二极管/雪崩二极管
多元二进制硅锗光电二极管/光纤光谱仪/压电陶瓷/红外观察仪/博盛
OSRAM光电二极管-光敏管硅光电池 波长570nm：SFH341...
通讯光电二极管/光纤光谱仪/光电探测器/压电陶瓷/氙灯/博盛
通讯硅光电二极管/光纤光谱仪/光电探测器/滤光片/博盛
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