1. | 设备名称: | 霍尔效应测试仪 |
2. | 功能描述: | 测量半导体薄膜中载流子类型、载流子浓度、迁移率、电阻率、霍尔系数等参数 |
3. | 技术参数: |
3-1 | 测试范围: | Si, SiGe, SiC, GaAs, InGaAs, InP, GaN (N Type & P Type)等材质的半导体薄膜中载流子类型、载流子浓度、迁移率、电阻率、霍尔系数等参数 |
3-2 | 磁场: |
3-2-1 | 磁场强度: | 1T 电磁体 |
3-2-2 | 磁场类型: | 电磁体 |
3-2-3 | 磁场均匀性: | 磁场不均匀性<±1 % 10年内磁场变化<±0.2% |
3-3 | 温 度: |
3-3-1 | 温度区域: | 77K(液氮温度)或室温 |
3-4 | 电阻率范围: | 1 µ Ohm*cm ~10 M Ohm*cm |
3-5 | 电阻范围: | 0.1 m Ohms ~10 G Ohms |
3-6 | 载流子浓度: | 107~1021cm-3 |
3-7 | 迁移率: | 10-2~107 cm2/volt*sec |
3-8 | 输入电流: |
3-8-1 | 电流范围: | 1000 pA~10mA |
3-8-2 | 电流解析度: | 2.5 pA (lowest range) |
3-8-3 | 电流精度: | 2% |
3-9 | 输入电压: |
3-9-1 | 电压范围: | ±10V |
3-9-2 | 电压分辨率: | 1μV |
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4. | 仪器特点: |
4-1 | Automatic or manual current selection 自动或手动模式(电流控制磁场模式) |
4-2 | Automatic contact check 自动接触检查(欧姆接触) |
4-3 | Routine and enhanced software 常规和增强软件 |
4-4 | Differential resistivity measurements by I/V-curves I/V曲线测试电阻率差异 |
4-5 | Variable magnetic field 变磁场 |
4-6 | Misalignment voltage compensation 失调电压补偿 |
4-7 | Correction of slow sample drift voltage, especially for ZnO, 修正慢样品漂移电压,特别是氧化锌 |
4-8 | Automatic field calibration 自动现场标定 |
4-9 | Large concentration and resistivity range 大浓度和电阻率范围 |
4-10 | Flexible, modular hardware 灵活的模块化硬件 |
4-11 | Support of various magnets, for example BioRad HL 5200 支持多样磁场 |
4-12 | Support of various temperature controllers 支持各种温度控制器(支持客户自行升级变温系统) |
4-13 | Van der Pauw and bar shape (bridge-type) Hall samples 支持范德堡和霍尔巴法测试霍尔 |