加拿大gentec-eo激光功率计能量计光束质量分析仪_详细资料

产品信息 加拿大Gentec-EO公司生产的激光功率能量计在激光测量领域声名显赫，其产品在国际上获得了广泛的应用。三十多年来，Gentec-EO一直全心致力于激光测量仪器的研制与开发，为用户提供更加全面的产品规格及更优惠的价格。七十年代初率产出*台焦热电式能量计；也首产了热电堆式和焦热电式能量计和功率计；九十年代中期研发的至今独有的WB技术，目前已使探测面平均功率密度损失阈值高达100kW/c 型号 P波Z大时限 P波Z小时限 Z大电压 Z小电压 λZ小值 λZ大值 传感器类型 孔径 PH10I-Si-USB 2 mW 2 pW N/A N/A 200 nm 1.1 μm 硅 10 x 10 mm PH5I-Ge-USB 2 mW 2 pW N/A N/A 600 nm 1.8 μm Germanium 5 mm ? PH5I-Ge-BNC 2 mW 2.2 pW N/A N/A 1 μm 1.7 μm Germanium 5 mm ? PH5B-Ge 2 mW 10 pW N/A N/A 1 μm 1.7 μm Germanium 5 mm ? PH5I-Si-BNC 2 mW 260 fW N/A N/A 200 nm 1.1 μm 硅 5.8 x 5.8 mm PH10B-Si 2 mW 10 pW N/A N/A 190 nm 1.1 μm 硅 10 mm ? PH3B-In 200 μW 10 pW N/A N/A 900 nm 1.6 μm InGaAs 3 mm ? PH100-Si 30 mW 600 pW N/A N/A 300 nm 1.1 μm 硅 11.28 mm ? PH100-Si-OD1 300 mW 6 nW N/A N/A 400 nm 1.1 μm 硅 11.28 mm ? PH100-Si-OD2 750 mW 60 nW N/A N/A 630 nm 1.1 μm 硅 11.28 mm ? PH100-SiUV 2.8 mW 600 pW N/A N/A 200 nm 900 nm Silicone UV 11.28 mm ? PH100-SiUV-OD1 25 mW 6 nW N/A N/A 400 nm 900 nm Silicone UV 11.28 mm ? PH100-SiUV-OD2 30 mW 60 nW N/A N/A 630 nm 900 nm Silicone UV 11.28 mm ? PH20-Ge 30 mW 2 nW N/A N/A 800 nm 1.65 μm Germanium 5 mm ? PH20-Ge-OD1 300 mW 20 nW N/A N/A 900 nm 1.65 μm Germanium 5 mm ? PH20-Ge-OD2 500 mW 200 nW N/A N/A 950 nm 1.65 μm Germanium 5 mm ? PE5I-Si-USB N/A N/A 20 nJ 10 fJ 200 nm 1.1 μm 硅 5 mm ? PE10I-Si-USB N/A N/A 20 nJ 10 fJ 200 nm 1.1 μm 硅 10 mm ? PE5I-Si-BNC N/A N/A 1 μJ 2 pJ 200 nm 1.1 μm 硅 5 mm ? PE10I-Si-BNC N/A N/A 1 μJ 2 pJ 200 nm 1.1 μm 硅 10 mm ? PE3B-Si N/A N/A 2 nJ 2 fJ 190 nm 1.1 μm 硅 3 mm ? PE5B-Si N/A N/A 20 nJ 500 fJ 190 nm 1.1 μm 硅 5 mm ? PE10B-Si N/A N/A 2 μJ 2 pJ 190 nm 1.1 μm 硅 10 mm ? PE5B-Ge N/A N/A 20 nJ 500 fJ 1 μm 1.7 μm Germanium 5 mm ? PE3B-In N/A N/A 2 nJ 5 fJ 900 nm 1.6 μm InGaAs 3 mm ? TRAP7-Si-C-USB 2 mW 2 pW N/A N/A 200 nm 980 nm 硅 7 mm ? TRAP7-Si-D-USB 2 mW 2 pW N/A N/A 200 nm 980 nm 硅 7 mm ? TRAP7-Si-C-BNC 2 mW 100 pW N/A N/A 200 nm 980 nm 硅 7 mm ? TRAP7-Si-D-BNC 2 mW 100 pW N/A N/A 200 nm 980 nm 硅 7 mm

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型号	P波Z大时限	P波Z小时限	Z大电压	Z小电压	λZ小值	λZ大值	传感器类型	孔径
PH10I-Si-USB	2 mW	2 pW	N/A	N/A	200 nm	1.1 μm	硅	10 x 10 mm
PH5I-Ge-USB	2 mW	2 pW	N/A	N/A	600 nm	1.8 μm	Germanium	5 mm ?
PH5I-Ge-BNC	2 mW	2.2 pW	N/A	N/A	1 μm	1.7 μm	Germanium	5 mm ?
PH5B-Ge	2 mW	10 pW	N/A	N/A	1 μm	1.7 μm	Germanium	5 mm ?
PH5I-Si-BNC	2 mW	260 fW	N/A	N/A	200 nm	1.1 μm	硅	5.8 x 5.8 mm
PH10B-Si	2 mW	10 pW	N/A	N/A	190 nm	1.1 μm	硅	10 mm ?
PH3B-In	200 μW	10 pW	N/A	N/A	900 nm	1.6 μm	InGaAs	3 mm ?
PH100-Si	30 mW	600 pW	N/A	N/A	300 nm	1.1 μm	硅	11.28 mm ?
PH100-Si-OD1	300 mW	6 nW	N/A	N/A	400 nm	1.1 μm	硅	11.28 mm ?
PH100-Si-OD2	750 mW	60 nW	N/A	N/A	630 nm	1.1 μm	硅	11.28 mm ?
PH100-SiUV	2.8 mW	600 pW	N/A	N/A	200 nm	900 nm	Silicone UV	11.28 mm ?
PH100-SiUV-OD1	25 mW	6 nW	N/A	N/A	400 nm	900 nm	Silicone UV	11.28 mm ?
PH100-SiUV-OD2	30 mW	60 nW	N/A	N/A	630 nm	900 nm	Silicone UV	11.28 mm ?
PH20-Ge	30 mW	2 nW	N/A	N/A	800 nm	1.65 μm	Germanium	5 mm ?
PH20-Ge-OD1	300 mW	20 nW	N/A	N/A	900 nm	1.65 μm	Germanium	5 mm ?
PH20-Ge-OD2	500 mW	200 nW	N/A	N/A	950 nm	1.65 μm	Germanium	5 mm ?
PE5I-Si-USB	N/A	N/A	20 nJ	10 fJ	200 nm	1.1 μm	硅	5 mm ?
PE10I-Si-USB	N/A	N/A	20 nJ	10 fJ	200 nm	1.1 μm	硅	10 mm ?
PE5I-Si-BNC	N/A	N/A	1 μJ	2 pJ	200 nm	1.1 μm	硅	5 mm ?
PE10I-Si-BNC	N/A	N/A	1 μJ	2 pJ	200 nm	1.1 μm	硅	10 mm ?
PE3B-Si	N/A	N/A	2 nJ	2 fJ	190 nm	1.1 μm	硅	3 mm ?
PE5B-Si	N/A	N/A	20 nJ	500 fJ	190 nm	1.1 μm	硅	5 mm ?
PE10B-Si	N/A	N/A	2 μJ	2 pJ	190 nm	1.1 μm	硅	10 mm ?
PE5B-Ge	N/A	N/A	20 nJ	500 fJ	1 μm	1.7 μm	Germanium	5 mm ?
PE3B-In	N/A	N/A	2 nJ	5 fJ	900 nm	1.6 μm	InGaAs	3 mm ?
TRAP7-Si-C-USB	2 mW	2 pW	N/A	N/A	200 nm	980 nm	硅	7 mm ?
TRAP7-Si-D-USB	2 mW	2 pW	N/A	N/A	200 nm	980 nm	硅	7 mm ?
TRAP7-Si-C-BNC	2 mW	100 pW	N/A	N/A	200 nm	980 nm	硅	7 mm ?
TRAP7-Si-D-BNC	2 mW	100 pW	N/A	N/A	200 nm	980 nm	硅	7 mm