IKA15N60T有非常低的VCE1.5伏(典型值),Z大结温175 ℃,短路承受时间- 5PS 600 V应用提供参数分布非常紧凑、高耐用性,温度稳定,非常高的开关速度Fx<50KHz,符合JEDEC标准应用,无铅铅镀,符合RoHS标准! IKA15N60T 的封装与K15T120和K15T1202不同,前者采用TO-220全绝缘封装后者属TO-247封装。但他们均属于N沟道IGBT,K15T120属英飞凌1200V低饱和压降型IGBT3单管,K15T1202属于1200V快速型IGBT4单管,他们的区别是硬开关频率。
供应IKA15N60T K15T60 K15T120 K15T1202 英飞凌1 600V及1200V IGBT单管,封装:TO-247/TO-220,饱和压降:1.7 V/1.5V.洽淡!
Features
Low Loss DuoPack: IGBT inTrenchStop®and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat)1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5μs
TrenchStop®and Fieldstop technology for 600 V applications offers:
very tight parameter distribution
high ruggedness, temperature stable behavior
very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications
Inverters
Key Parameters Maximum ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited byTjmax
TC= 25°C
TC= 100°C IC 14.7
8.9 A
Pulsed collector current,tplimited byTjmax ICpuls 45
Turn off safe operating area (VCE≤ 600V,Tj≤ 175°C) - 45
Diode forward current, limited byTjmax
TC= 25°C
TC= 100°C IF 15.5
9
Diode pulsed current,tplimited byTjmax IFpuls 45
Gate-emitter voltage VGE ±20 V
Short circuit withstand time2)
VGE= 15V,VCC≤ 400V,Tj≤ 150°C tSC 5 µs
Power dissipationTC= 25°C Ptot 35.7 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -55...+175
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s 260
Isolation Voltage Visol 2500 Vrms
1J-STD-020 and JESD-022
2)Allowed number of short circuits: <1000; time between short circuits: >1s.