1.
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设备名称:
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霍尔效应测试仪
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2.
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功能描述:
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测量半导体薄膜中载流子类型、载流子浓度、迁移率、电阻率、霍尔系数等参数
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3.
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技术参数:
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3-1
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测试范围:
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Si, SiGe, SiC, GaAs, InGaAs, InP, GaN (N Type & P Type)等材质的半导体薄膜中载流子类型、载流子浓度、迁移率、电阻率、霍尔系数等参数
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3-2
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磁场:
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3-2-1
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磁场强度:
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0.45T 永磁体
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3-2-2
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磁场类型:
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永磁体
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3-2-3
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磁场均匀性:
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磁场不均匀性<±1 %
10年内磁场变化<±0.2%
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3-3
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温 度:
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3-3-1
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温度区域:
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77K(液氮温度)或室温
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3-4
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电阻率范围:
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1 µ Ohm*cm ~10 M Ohm*cm
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3-5
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电阻范围:
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0.1 m Ohms ~10 G Ohms
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3-6
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载流子浓度:
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107~1021cm-3
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3-7
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迁移率:
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10-2~107 cm2/volt*sec
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3-8
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输入电流:
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3-8-1
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电流范围:
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1000 pA~10mA
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3-8-2
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电流解析度:
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2.5 pA (lowest range)
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3-8-3
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电流精度:
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2%
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3-9
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输入电压:
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3-9-1
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电压范围:
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±10V
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3-9-2
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电压分辨率:
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1μV
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4.
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仪器特点:
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4-1
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Automatic contact check
自动接触检查(欧姆接触)
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4-2
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Routine and enhanced software
常规和增强软件
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4-3
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Differential resistivity measurements by I/V-curves
I/V曲线测试电阻率差异
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4-4
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Misalignment voltage compensation
失调电压补偿
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4-5
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Correction of slow sample drift voltage, especially for ZnO,
修正慢样品漂移电压,特别是氧化锌
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4-6
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Automatic field calibration
自动现场标定
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4-7
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Large concentration and resistivity range
大浓度和电阻率范围
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4-8
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Flexible, modular hardware
灵活的模块化硬件
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4-9
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Support of various magnets, for example BioRad HL 5200
支持多样磁场
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4-10
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Support of various temperature controllers
支持各种温度控制器(支持客户自行升级变温系统)
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5
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硬件
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5-1
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The standard system consists of a bench top electronic system, a small magnet and a sample stage for room temperature and LN2 measurements.
标准系统包含电子测试系统、磁场和两个温度区域的测试平台(室温和液氮温度)
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5-2
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The electronics include the current source, the voltage measurement part, the contact switching module and the IEEE or RS232 interface. It is completely micro processor controlled.
电子测试系统包括由单片机控制的电流源、电压测试、接触开关模块、IEEE或RS232接口
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5-3
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The contact switching module is designed to allow all possible measurement configurations.
接触开关模块支持所有用户用于其他的配置(用户可以采用制冷机做变温霍尔测试)
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5-4
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The current source has adjustable limits for voltage and/or power. {+++}
电流源具有可调电压和/或电源的限制
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5-5
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Voltage measurement provides different input amplifiers optimized for either low current or low voltage applications.
电压测量提供了不同的输入放大器或低电流或低电压应用的优化。
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