Benchtop, turnkey system for high-throughput graphene synthesisFeatures
- Reproducible graphene synthesis
- Easy installation and operation
- Precise control of conditions
- Comprehensive safety features
- Process times <30 mins
Technology
- Maximum substrate size: 20mm × 40 mm
- 1100 °C maximum temperature
- Cold Wall Reactor
- Minimal chamber volume
- Low thermal-mass heater/stage assembly
- Temperature control thermocouple in close proximity to substrates
Safety Features
- Shutdown in event of pumping failure
- Heating and flammable gas flows disabled until purge routine completed
- Monitoring of thermcouple integrity; shutdown on error Dilution of flammable gases with inert gas (at pump)
- Internal temperature monitoring; shutdown if exceeds limit
- Chamber held shut until heater drops below set temperature
- Shutdown in event of unexpected pressure rise
- Gas flows default to zero in case of power loss
Full Automatic Control - User-friendly, touchscreen interface
- Create/save multiple growth programs
- PC connection for data-logging
Intuitive interface of the touch screen
Front View Rear View Loading copper foil for graphene growth
Modes of Operation
Standard: Low pressure operation (below 20 Torr). Feedstock CH4, Ar and H2 process gases.
Options: Additional gas lines, dry/faster pumping systems, substrate thermocouples, atmospheric pressure operation.
NanoCVD-G Systems are optimized for graphene growth.
The Raman spectrum above is of a graphene sample transferred onto a piece of oxidised silicon wafer.
Applications
Product development and education in:
- Electrodes for photovoltaics
- Touchscreen displays
- High-performance electronics
- Biological, chemical and mechanical sensors
- Electrical energy storage
- Graphene Research
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